Contact Us

US20050277256A1 Nanolaminates of hafnium oxide and

A dielectric film containing a HfO 2 /ZrO 2 nanolaminate and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than...

Optical and mechanical properties of nanolaminates of

HfO 2films and nanolaminates. The growth cycle sequences of the nanolaminate films are given by labels. FIG. 5. Averaged elastic moduli of the samples against indenter displacement depth for reference ZrO and HfO films and nanolaminates. The growth cycle sequences of the nanolaminate films are given by labels. FIG. 6. Scanning probe images of indents of 500 deposition cycles of HfO

Mechanical properties of aluminum, zirconium, hafnium

25/11/2015 The laminates were deposited by alternate layering of two different oxides, varying thickness periods within HfO 2 –Ta 2 O 5, ZrO 2 –Ta 2 O 5, and Al 2 O 3 –Ta 2 O 5 double-layers. The number of ALD cycles applied for the growth of a single 2.5–15 nm thick layer constituting a nanolaminate was varied in the range of 50–300.

US Patent Application for Nanolaminates of hafnium oxide

Nanolaminates of hafnium oxide and zirconium oxide . Jul 11, 2005 A dielectric film containing a HfO2/ZrO2 nanolaminate and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric layer containing a HfO2/ZrO2 nanolaminate may be realized in a wide variety of electronic devices and

Optical and mechanical properties of nanolaminates of

Nanolaminates of HfO 2 and ZrO 2 were grown by atomic layer deposition and were grown to the thicknesses of 105 ± 4 nm. In the HfO 2-ZrO 2 nanolaminates, the phase composition could be described as monoclinic and tetragonal polymorphs for ZrO 2 mixed with the monoclinic phase of HfO 2. The absorption coefficient of the films in the wavelength range of 275–970 nm was close to zero, and the refractive index values generally remaining between the values of the reference single metal oxides

Engineering of Ferroelectric HfO 2-ZrO 2 Nanolaminates

In this work, the ferroelectric properties of nanolaminates made of HfO 2 and ZrO 2 were studied as a function of the deposition temperature and the individual HfO 2 /ZrO 2 layer thickness before and after electrical field cycling. The ferroelectric response was found to depend on the structure of the nanolaminates before any postdeposition annealing treatment. After annealing with a TiN cap, an "antiferroelectric-like" response was obtained from nanolaminates

US Patent for Nanolaminates of hafnium oxide and

A dielectric film containing a HfO2/ZrO2 nanolaminate and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric layer containing a HfO2/ZrO2 nanolaminate may be realized in a wide variety of electronic devices and systems.

Hafnium Oxide Nanoparticles / Nanopowder AMERICAN

Nanoscale Hafnium Oxide Nanoparticles are typically 5 100 nanometers (nm) with specific surface area (SSA) in the 25 50 m 2 /g range. Nano Hafnium Oxide Particles are also available in Ultra high purity and high purity and coated and dispersed forms. They are also available as a dispersion through the AE Nanofluid production group.

Tetrakis(dimethylamido)hafnium(IV) packaged for use in

Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices. Packaging 25 g in stainless steel cylinder

Tetrakis(dimethylamido)hafnium(IV) packaged for use in

Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices. Packaging 25 g in stainless steel cylinder Safety & Documentation. Safety Information. Symbol GHS02,GHS05. Signal word Danger

Engineering of Ferroelectric HfO2–ZrO2 Nanolaminates

In this work, the ferroelectric properties of nanolaminates made of HfO2 and ZrO2 were studied as a function of the deposition temperature and the individual HfO2/ZrO2 layer thickness before and after electrical field cycling. The ferroelectric response was found to depend on the structure of the nanolaminates before any postdeposition annealing treatment.

Optical and mechanical properties of nanolaminates of

Article “Optical and mechanical properties of nanolaminates of zirconium and hafnium oxides grown by atomic layer deposition” Detailed information of the J-GLOBAL is a service based on the concept of Linking, Expanding, and Sparking, linking science and technology information which hitherto stood alone to support the generation of ideas. By linking the information entered, we provide

hafnium o ide nanolaminates std57.es

Tetrakis(dimethylamido)hafnium(IV) packaged for use in,Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices. Engineering of Ferroelectric HfO 2-ZrO 2 Nanolaminates,19 Apr 2017 In this work, the ferroelectric properties of nanolaminates made of HfO 2 and ZrO 2 were studied as a function

Surface morphology and crystallinity control in the

01/02/2003 Nanolaminates of hafnium, zirconium and aluminum oxide were also prepared. Atomic force microscopy was used to characterize the surface morphology of

Perforated pitting prevention of 316L stainless steel

Hafnium dioxide (HfO2)--aluminum oxide (Al2O 3) nanolaminate films are explored as a method to control the perforated pitting of 316L stainless steel (SS) in a Hanks' balanced salt solution electrolyte. Uncoated 316L SS, and 316L coated with single layer HfO2, single layer Al2O3, and HfO2-Al2O 3 nanolaminates are examined. The HfO2 layer thickness in the nanolaminates is held constant at 7.3

IMI News and Resources Intermolecular| Home

To improve ferroelectric properties of hafnium-zirconium oxide blends, scientists stacked nanometer-thick films of HfO 2 and ZrO 2. [1] These nanolaminates are made using Intermolecular’s atomic layer deposition (ALD) technology, with which the thickness of each layer is controlled to the precision of a single atom. To determine how stacking affects performance, bilayers were prepared with

The structure, optical behavior, and thermal stability of

Hafnium dioxide (HfO2, hafnia) is a refractory material that has gained importance in thin films for wide band gap and optical coating applications. The goal of this work is to examine the crystallization behavior, optical absorption, and thermal stability of single layer HfO2 and nanolaminate HfO2-Al2O3 films, and to investigate the nucleation behavior of nanocrystalline HfO2 in ultrathin layers.

Growth of Y2O3 and HfO2 as Single Compounds and as

Motivation for Research yTo work with new high dielectric constant (k) materials such as and HfO 2 and Y 2 O 3 to replace SiO 2 in micro‐and nano‐electronics yTo run experiments in the atomic layer deposition (ALD) reactor and to examine thin film growth rates yTo analyze the resulting thin films on silicon using

Elucidating possible crystallographic origins of wake-up

02/03/2021 Amorphous doped hafnia layers were grown with a thickness of 8–10 nm using atomic layer deposition (ALD) on 300 mm Si (100) wafers. A process temperature of 300 °C was used with HfCl 4 and H 2 O precursors. Dopant [Al (7% doping) or Si (3.6% doping)] oxide layers were inserted by adjusting the pulse ratio of Hf and dopant layers in deposition.

IMI News and Resources Intermolecular| Home

To improve ferroelectric properties of hafnium-zirconium oxide blends, scientists stacked nanometer-thick films of HfO 2 and ZrO 2. [1] These nanolaminates are made using Intermolecular’s atomic layer deposition (ALD) technology, with which the thickness of each layer is controlled to the precision of a single atom. To determine how stacking affects performance, bilayers were prepared with

Optical and mechanical properties of nanolaminates of

Article “Optical and mechanical properties of nanolaminates of zirconium and hafnium oxides grown by atomic layer deposition” Detailed information of the J-GLOBAL is a service based on the concept of Linking, Expanding, and Sparking, linking science and technology information which hitherto stood alone to support the generation of ideas. By linking the information entered, we provide

Hardness, elastic modulus, and wear resistance of hafnium

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35, 01B105 (2017); 10.1116/1.4966198 Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends Journal of Applied Physics 113, 021301 (2013); 10.1063/1.4757907

Thickness-dependent ferroelectric properties of HfO 2 /ZrO

03/01/2021 Ferroelectric nanolaminates have drawn wide attention due to the process convenience of atomic layer deposition (ALD) method and their superior performance. In this work, HfO2/ZrO2 nanolaminates were prepared by alternately depositing HfO2 and ZrO2 single layer with ALD technology. The crystal structures and electrical properties were comprehensively investigated and

Development of high-k hafnium–aluminum oxide

In this paper, high-k hafnium–aluminum oxide (HAO) films were synthesized by the sol–gel technique. The effects of the ratio of Hf and Al on the properties of the HAO films were investigated thoroughly. The average optical transmittance of the HAO films was above 88% within the visible light range and Al incorporation in HfO 2 can enlarge the band gap of HAO films. X-ray diffraction (XRD

Hafnium titanium oxide films Micron Technology, Inc.

Nanolaminates of hafnium oxide and zirconium oxide: December, 2005: Ahn et al. 6979855: High-quality praseodymium gate dielectrics: December, 2005: Ahn et al. 6970053: Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection: November, 2005 : Akram et al. 6967159: Systems and methods for forming refractory metal nitride layers using

Anomalous behavior of the dielectric constant of hafnium

Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films. Callegari. Journal of Applied Physics, (12) Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates. Kukli. Applied Physics Letters, (26) Hafnium and zirconium silicates for advanced gate dielectrics. Wilk. Journal of Applied Physics, (1) Show 10 more references (10 of 47)

Surfacemorphologyandcrystallinitycontrolintheatomic

(approximate 2y of 351 for zirconium oxide and forhafniumoxide)fortheas-depositedfilmswas found to be largely invariant with the deposition temperature. 2.3. Film characterization: TEM Low resolution TEM images of thin (thickness less than 50nm) films of zirconium and hafnium oxide grown on carbon revealed many easily

Elucidating possible crystallographic origins of wake-up

02/03/2021 Amorphous doped hafnia layers were grown with a thickness of 8–10 nm using atomic layer deposition (ALD) on 300 mm Si (100) wafers. A process temperature of 300 °C was used with HfCl 4 and H 2 O precursors. Dopant [Al (7% doping) or Si (3.6% doping)] oxide layers were inserted by adjusting the pulse ratio of Hf and dopant layers in deposition.

Growth of Y2O3 and HfO2 as Single Compounds and as

Motivation for Research yTo work with new high dielectric constant (k) materials such as and HfO 2 and Y 2 O 3 to replace SiO 2 in micro‐and nano‐electronics yTo run experiments in the atomic layer deposition (ALD) reactor and to examine thin film growth rates yTo analyze the resulting thin films on silicon using